This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 18 Oct 2004 → 21 Oct 2004
|Conference||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||18/10/04 → 21/10/04|