BSIM5 MOSFET model

Xuemei Xi; Jin He; Mohan Dunga; Hui Wau; Mansun Chan; Chung Hsun Lin; Babak Heydari; Ali M. Niknejad; Chen-Ming Hu

BSIM5 MOSFET model

Xuemei Xi^*, Jin He, Mohan Dunga, Hui Wau, Mansun Chan, Chung Hsun Lin, Babak Heydari, Ali M. Niknejad, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

12 Scopus citations

Abstract

This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.

Original language	English
Pages	920-923
Number of pages	4
State	Published - 1 Dec 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country	China
City	Beijing
Period	18/10/04 → 21/10/04

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title = "BSIM5 MOSFET model",

abstract = "This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.",

author = "Xuemei Xi and Jin He and Mohan Dunga and Hui Wau and Mansun Chan and Lin, {Chung Hsun} and Babak Heydari and Niknejad, {Ali M.} and Chen-Ming Hu",

year = "2004",

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day = "1",

language = "English",

pages = "920--923",

note = "null ; Conference date: 18-10-2004 Through 21-10-2004",

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BSIM5 MOSFET model. / Xi, Xuemei; He, Jin; Dunga, Mohan; Wau, Hui; Chan, Mansun; Lin, Chung Hsun; Heydari, Babak; Niknejad, Ali M.; Hu, Chen-Ming.

2004. 920-923 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conference › Paper › peer-review

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AU - Xi, Xuemei

AU - He, Jin

AU - Dunga, Mohan

AU - Wau, Hui

AU - Chan, Mansun

AU - Lin, Chung Hsun

AU - Heydari, Babak

AU - Niknejad, Ali M.

AU - Hu, Chen-Ming

PY - 2004/12/1

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AB - This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.

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