BSIM5 MOSFET model

Xuemei Xi*, Jin He, Mohan Dunga, Hui Wau, Mansun Chan, Chung Hsun Lin, Babak Heydari, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

12 Scopus citations

Abstract

This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies.

Original languageEnglish
Pages920-923
Number of pages4
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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