TY - JOUR
T1 - BSIM - SPICE models enable FinFET and UTB IC designs
AU - Paydavosi, Navid
AU - Venugopalan, Sriramkumar
AU - Chauhan, Yogesh Singh
AU - Duarte, Juan Pablo
AU - Jandhyala, Srivatsava
AU - Niknejad, Ali M.
AU - Hu, Chen-Ming
PY - 2013/1/1
Y1 - 2013/1/1
N2 - Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-Around-gate FinFETs and it is selected as the world's flurst industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are flurst obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as shortchannel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.
AB - Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-Around-gate FinFETs and it is selected as the world's flurst industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are flurst obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as shortchannel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.
KW - Double-gate FET
KW - FinFET
KW - Integrated circuit modeling
KW - MOSFET compact model
KW - RF FinFET
KW - Short-channel effects
KW - SPICE
KW - Triple-gate FET
KW - UTB-SOI
KW - UTBB-SOI
UR - http://www.scopus.com/inward/record.url?scp=84891067897&partnerID=8YFLogxK
U2 - 10.1109/ACCESS.2013.2260816
DO - 10.1109/ACCESS.2013.2260816
M3 - Article
AN - SCOPUS:84891067897
VL - 1
SP - 201
EP - 215
JO - IEEE Access
JF - IEEE Access
SN - 2169-3536
M1 - 6514968
ER -