BSIM model research and recent progress

Jin He*, Mansun Chan, Xuemei Xi, Hui Wan, Shu Pin, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley, including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice, via the calculation of the body potential ΔVbi and body current/charge, helps circuit designers in the trend of the coexistence of PD and FD devices.

Original languageEnglish
Pages (from-to)388-396
Number of pages9
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume27
Issue number3
DOIs
StatePublished - Mar 2006

Keywords

  • BSIM4
  • BSIM5
  • BSIMSOI
  • Compact modeling
  • Device physics
  • MOSFETs

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