A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 2007|
|Event||2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan|
Duration: 12 Jun 2007 → 14 Jun 2007