BSIM-MG: A versatile multi-gate FET model for mixed-signal design

Mohan V. Dunga, Chung Hsun Lin, Darsen D. Lu, Weize Xiong, C. R. Cleavelin, P. Patruno, Jiunn Ren Hwang, Fu Liang Yang, Ali M. Niknejad, Chen-Ming Hu

Research output: Contribution to journalConference articlepeer-review

41 Scopus citations


A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are ∞-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

Original languageEnglish
Article number4339727
Pages (from-to)60-61
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 2007
Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
Duration: 12 Jun 200714 Jun 2007

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