BSIM - Making the first international standard MOSFET model

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


BSIM (Berkeley Short-Channel IGFET) became the first international industry standard model for simulation of MOS integrated circuits in 1997. The cumulative sales of ICs that have been designed with the aid of BSIM and produced for computing, communication, consumer, and industrial applications is estimated to be around 400 billion US dollars. From 0.35 μm CMOS to multi-gate FinFET, BSIM serves a wide range of technologies. Many China educated researchers have contributed to its success.

Original languageEnglish
Pages (from-to)765-773
Number of pages9
JournalScience in China, Series F: Information Sciences
Issue number6
StatePublished - 1 Jun 2008


  • BSIM
  • Compact modeling
  • MOS

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