BSIM - Making the first international standard MOSFET model

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

BSIM (Berkeley Short-Channel IGFET) became the first international industry standard model for simulation of MOS integrated circuits in 1997. The cumulative sales of ICs that have been designed with the aid of BSIM and produced for computing, communication, consumer, and industrial applications is estimated to be around 400 billion US dollars. From 0.35 μm CMOS to multi-gate FinFET, BSIM serves a wide range of technologies. Many China educated researchers have contributed to its success.

Original languageEnglish
Pages (from-to)765-773
Number of pages9
JournalScience in China, Series F: Information Sciences
Volume51
Issue number6
DOIs
StatePublished - 1 Jun 2008

Keywords

  • BSIM
  • Compact modeling
  • MOS

Fingerprint Dive into the research topics of 'BSIM - Making the first international standard MOSFET model'. Together they form a unique fingerprint.

Cite this