BSIM Industry standard compact MOSFET models

Yogesh Singh Chauhan*, Sriram Venugopalan, Mohammed A. Karim, Sourabh Khandelwal, Navid Paydavosi, Pankaj Thakur, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations


BSIM compact models have served industry for more than a decade starting with BSIM3 and later BSIM4 and BSIMSOI. Here we will briefly discuss the ongoing work on current and future device models in BSIM group. BSIM6 is the next generation bulk RF MOSFET Model which uses charge based core with physical models adapted from BSIM4. Model fulfills all symmetry tests and shows correct slopes for harmonics. The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Models include all read device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012
Number of pages4
StatePublished - 14 Dec 2012
Event38th European Solid State Circuits Conference, ESSCIRC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012

Publication series

NameEuropean Solid-State Circuits Conference
ISSN (Print)1930-8833


Conference38th European Solid State Circuits Conference, ESSCIRC 2012

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