BSIM Industry standard compact MOSFET models

Yogesh Singh Chauhan; Sriram Venugopalan; Mohammed A. Karim; Sourabh Khandelwal; Navid Paydavosi; Pankaj Thakur; Ali M. Niknejad; Chen-Ming Hu

doi:10.1109/ESSCIRC.2012.6341249

BSIM Industry standard compact MOSFET models

Yogesh Singh Chauhan^*, Sriram Venugopalan, Mohammed A. Karim, Sourabh Khandelwal, Navid Paydavosi, Pankaj Thakur, Ali M. Niknejad, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

BSIM compact models have served industry for more than a decade starting with BSIM3 and later BSIM4 and BSIMSOI. Here we will briefly discuss the ongoing work on current and future device models in BSIM group. BSIM6 is the next generation bulk RF MOSFET Model which uses charge based core with physical models adapted from BSIM4. Model fulfills all symmetry tests and shows correct slopes for harmonics. The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Models include all read device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.

Original language	English
Title of host publication	2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012
Pages	30-33
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2012.6341249
State	Published - 14 Dec 2012
Event	38th European Solid State Circuits Conference, ESSCIRC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012

Publication series

Name	European Solid-State Circuits Conference
ISSN (Print)	1930-8833

Conference

Conference	38th European Solid State Circuits Conference, ESSCIRC 2012
Country	France
City	Bordeaux
Period	17/09/12 → 21/09/12

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title = "BSIM Industry standard compact MOSFET models",

abstract = "BSIM compact models have served industry for more than a decade starting with BSIM3 and later BSIM4 and BSIMSOI. Here we will briefly discuss the ongoing work on current and future device models in BSIM group. BSIM6 is the next generation bulk RF MOSFET Model which uses charge based core with physical models adapted from BSIM4. Model fulfills all symmetry tests and shows correct slopes for harmonics. The BSIM-CMG and BSIM-IMG are the surface potential based models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Models include all read device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.",

author = "Chauhan, {Yogesh Singh} and Sriram Venugopalan and Karim, {Mohammed A.} and Sourabh Khandelwal and Navid Paydavosi and Pankaj Thakur and Niknejad, {Ali M.} and Chen-Ming Hu",

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Chauhan, YS, Venugopalan, S, Karim, MA, Khandelwal, S, Paydavosi, N, Thakur, P, Niknejad, AM & Hu, C-M 2012, BSIM Industry standard compact MOSFET models. in 2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012., 6341249, European Solid-State Circuits Conference, pp. 30-33, 38th European Solid State Circuits Conference, ESSCIRC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSCIRC.2012.6341249

BSIM Industry standard compact MOSFET models. / Chauhan, Yogesh Singh; Venugopalan, Sriram; Karim, Mohammed A.; Khandelwal, Sourabh; Paydavosi, Navid; Thakur, Pankaj; Niknejad, Ali M.; Hu, Chen-Ming.

2012 Proceedings of the European Solid State Circuits Conference, ESSCIRC 2012. 2012. p. 30-33 6341249 (European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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