BSIM-IMG: Compact model for RF-SOI MOSFETs

Pragya Kushwaha, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Aditya Medury, Chen-Ming Hu, Yogesh S. Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages287-288
Number of pages2
ISBN (Electronic)9781467381345
DOIs
StatePublished - 3 Aug 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • Logic gates
  • MOSFET
  • Radio frequency
  • Semiconductor device modeling
  • Silicon
  • Switches

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