BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion

H. Agarwal*, P. Kushwaha, A. Dasgupta, M. Y-Kao, T. Morshed, G. Workman, K. Shanbhag, X. Li, V. Vinothkumar, Y. S. Chauhan, S. Salahuddin, C. Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

FDSOI devices are prominently used in low power circuits and high frequency domains due to their superior RF and analog performance, thanks to back-bias capability and relatively ease of transistor design over FinFETs and planar bulk transistors. BSIM-IMG is the industry standard compact model for simulating FDSOI devices. In this work, we will discuss recent enhancements made in the BSIM-IMG model for accurate modeling of the FDSOI transistors. The back gate inversion is more physically modeled in the latest BSIM-IMG model. We will present a new 1/f noise model, which is validated with the experimental data. Improved output conductance, mobility and gate current models are also discussed. All the enhancements are done in such a way that benchmark RF figure of merit are met.

Original languageEnglish
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
StatePublished - Apr 2020
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: 6 Apr 202021 Apr 2020

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period6/04/2021/04/20

Keywords

  • back-side inversion
  • BSIM-IMG
  • compact model
  • FDSOI

Fingerprint Dive into the research topics of 'BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion'. Together they form a unique fingerprint.

Cite this