BSIM-HV: High-Voltage MOSFET Model including Quasi-Saturation and Self-Heating Effect

H. Agarwal*, C. Gupta, R. Goel, P. Kushwaha, Y. K. Lin, M. Y. Kao, J. P. Duarte, H. L. Chang, Y. S. Chauhan, S. Salahuddin, C. Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement.

Original languageEnglish
Article number8812759
Pages (from-to)4258-4263
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number10
DOIs
StatePublished - Oct 2019

Keywords

  • High voltage (HV)
  • impact ionization
  • quasi-saturation
  • self-heating
  • velocity saturation

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