BSIM compact MOSFET models for SPICE simulation

Yogesh Singh Chauhan, Sriram Venugopalan, Navid Paydavosi, Pragya Kushwaha, Srivatsava Jandhyala, Juan Pablo Duarte, Shantanu Agnihotri, Chandan Yadav, Harshit Agarwal, Ali Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

Continuous technology advancements have forced MOSFET architecture to evolve from bulk to SOI to multigate MOSFETs. BSIM compact models have helped circuit designers to realize their designs first time correct using accurate physical models used in SPICE simulation. BSIM3 and BSIM4 are threshold voltage based bulk MOSFET models while BSIM6 is charge based bulk MOSFET model, which include physical effects such as mobility degradation, current saturation, high frequency models etc. BSIM6 has been developed especially to address symmetry around Vds = 0, thus providing smooth higher order derivatives. BSIM-CMG is a CMC standard surface potential based model for common symmetric double, triple, quadruple and surround gate (nanowire) MOSFETs. Long channel DIBL also called Drain-Induced Threshold Shift (DITS) effect and asymmetric charge weighing factor etc. have been recently included in it. BSIM-IMG is a surface potential based model to simulate ultra-thin body devices such as UTBSOI but also other thin body devices such as MOS2 transistor.

Original languageEnglish
Title of host publicationProceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013
Pages23-28
Number of pages6
StatePublished - 6 Dec 2013
Event20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013 - Gdynia, Poland
Duration: 20 Jun 201322 Jun 2013

Publication series

NameProceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013

Conference

Conference20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013
CountryPoland
CityGdynia
Period20/06/1322/06/13

Keywords

  • BSIM-CMG
  • BSIM-IMG
  • BSIM6
  • FinFET
  • Symmetry
  • UTBSOI

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