BSIM compact model of quantum confinement in advanced nanosheet FETs

Avirup Dasgupta*, Shivendra Singh Parihar, Pragya Kushwaha, Harshit Agarwal, Ming Yen Kao, Sayeef Salahuddin, Yogesh Singh Chauhan, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We propose a compact model for nanosheet FETs that take the effects of quantum confinement into account. The model captures the nanosheet width and thickness dependence of the electrostatic dimension, density of states, effective mass, subband energies, and threshold voltages and includes them in the charge calculation, resulting in an accurate terminal charge and current characteristics. The model has been implemented using Verilog-A in the BSIM-CMG framework for all simulations. It has been validated with band-structure calculation-based TCAD simulations as well as measured data. We have also highlighted the significance of quantum mechanical effects on analog and RF performance of the device.

Original languageEnglish
Article number8955828
Pages (from-to)730-737
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - Feb 2020


  • Bandgap
  • compact model
  • density of states (DOS)
  • dimension
  • effective mass
  • gate-all-around
  • nanosheet
  • nanowire
  • quantum capacitance
  • subband energy

Fingerprint Dive into the research topics of 'BSIM compact model of quantum confinement in advanced nanosheet FETs'. Together they form a unique fingerprint.

Cite this