BSIM-CG: A compact model of cylindrical gate/nanowire MOSFETs for circuit simulations

V. Sriramkumar*, Darsen D. Lu, Tanvir H. Morshed, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages124-125
Number of pages2
DOIs
StatePublished - 11 Jul 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

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