BSD-protection design with extra low-leakage-current diode string for RF circuits in SiGe BiCMOS process

Ming-Dou Ker*, Yuan Wen Hsiao, Woei Lin Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Two low-leakage resistor-shunted diode strings are developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes.

Original languageEnglish
Pages (from-to)517-527
Number of pages11
JournalIEEE Transactions on Device and Materials Reliability
Volume6
Issue number4
DOIs
StatePublished - 1 Dec 2006

Keywords

  • Electrostatic discharge (ESD)
  • Modified resistor-shunted diode string (MR diode string)
  • MR trigger bipolar ESD power clamp
  • Power-rail ESD clamp circuit
  • Resistor-shunted diode string (RS diode string)
  • RS trigger bipolar ESD power clamp

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