Broadband antireflection and field emission properties of TiN-coated Si-nanopillars

Yuan Ming Chang; Srikanth Ravipati; Pin Hsu Kao; Jiann Shieh; Fu-Hsiang Ko; Jenh-Yih Juang

doi:10.1039/c4nr01874e

Broadband antireflection and field emission properties of TiN-coated Si-nanopillars

Yuan Ming Chang^*, Srikanth Ravipati, Pin Hsu Kao, Jiann Shieh, Fu-Hsiang Ko, Jenh-Yih Juang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.

Original language	English
Pages (from-to)	9846-9851
Number of pages	6
Journal	Nanoscale
Volume	6
Issue number	16
DOIs	https://doi.org/10.1039/c4nr01874e
State	Published - 21 Aug 2014

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title = "Broadband antireflection and field emission properties of TiN-coated Si-nanopillars",

abstract = "Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.",

author = "Chang, {Yuan Ming} and Srikanth Ravipati and Kao, {Pin Hsu} and Jiann Shieh and Fu-Hsiang Ko and Jenh-Yih Juang",

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T1 - Broadband antireflection and field emission properties of TiN-coated Si-nanopillars

AU - Chang, Yuan Ming

AU - Ravipati, Srikanth

AU - Kao, Pin Hsu

AU - Shieh, Jiann

AU - Ko, Fu-Hsiang

AU - Juang, Jenh-Yih

PY - 2014/8/21

Y1 - 2014/8/21

N2 - Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.

AB - Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.

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