Broadband antireflection and field emission properties of TiN-coated Si-nanopillars

Yuan Ming Chang*, Srikanth Ravipati, Pin Hsu Kao, Jiann Shieh, Fu-Hsiang Ko, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.

Original languageEnglish
Pages (from-to)9846-9851
Number of pages6
Issue number16
StatePublished - 21 Aug 2014

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