Broadband and omnidirectional antireflection employing disordered GaN nanopillars

C. H. Chiu, Pei-Chen Yu*, Hao-Chung Kuo, C. C. Chen, Tien-Chang Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, Y. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations


Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral antireflective characteristics, up to an incident angle of 60° and for the wavelength range of λ=300-1800nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p- polarizations.

Original languageEnglish
Pages (from-to)8748-8754
Number of pages7
JournalOptics Express
Issue number12
StatePublished - 9 Jun 2008

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