We report broad-spectrum electroluminescence (EL) in metal-insulator- silicon (MIS) tunnel diodes. In addition to Si-band-edge EL near 1.1 eV, hot-electron EL in Si can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum EL photon energy increases with forward-bias voltage. In one implementation, sub-micron-size sites for light emission appear during forward-bias stress. The number of sites is linear in the applied current, consistent with formation of an anti-fuse at each site following breakdown of the insulator. We compare the post-stress current-voltage data to the quantum-point-contact model. Results are presented for various p-type Si(100) MIS devices having thin (8 nm or less) insulating layers of SiO 2, Al2O3, and HfOxNy. We also describe novel MIS devices in which electron-beam lithography of an 18-nm-thick SiO2 insulator is used to define the EL sites.
|Number of pages||12|
|Journal||Progress in Biomedical Optics and Imaging - Proceedings of SPIE|
|State||Published - 21 Jul 2005|
|Event||Optoelectronic Integration on Silicon II - San Jose, CA, United States|
Duration: 25 Jan 2005 → 26 Jan 2005
- Soft breakdown
- Tunnel diode