Breakdown modes and their evolution in ultrathin gate oxide

Horng-Chih Lin; Da Yuan Lee; Tiao Yuan Huang

doi:10.1143/JJAP.41.5957

Breakdown modes and their evolution in ultrathin gate oxide

Horng-Chih Lin^*, Da Yuan Lee, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Post-breakdown current-voltage characteristics of metal-oxide-semiconductor (MOS) devices with an ultrathin gate oxide layer have been carefully studied. Several breakdown modes were identified. Specifically, it was found that the typical soft-breakdown mode induced in an oxide layer thinner than 3 nm is actually quite different from that in an oxide layer thicker than 3 nm. Based on these findings, we have also proposed a model to explain the evolution of different breakdown modes. The model takes into consideration the thermal runaway process at the breakdown moment, and is substantiated by a number of experimental findings. Impacts of each breakdown mode on device switching behavior are also discussed.

Original language	English
Pages (from-to)	5957-5963
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.41.5957
State	Published - 1 Oct 2002

Keywords

Hard breakdown
Metal-oxide-semiconductor (MOS)
Soft breakdown
Ultrathin gate oxide

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AB - Post-breakdown current-voltage characteristics of metal-oxide-semiconductor (MOS) devices with an ultrathin gate oxide layer have been carefully studied. Several breakdown modes were identified. Specifically, it was found that the typical soft-breakdown mode induced in an oxide layer thinner than 3 nm is actually quite different from that in an oxide layer thicker than 3 nm. Based on these findings, we have also proposed a model to explain the evolution of different breakdown modes. The model takes into consideration the thermal runaway process at the breakdown moment, and is substantiated by a number of experimental findings. Impacts of each breakdown mode on device switching behavior are also discussed.

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Breakdown modes and their evolution in ultrathin gate oxide

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Keywords

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