Breakdown and reliability of metal gate-la2o3 thin films after post-deposition annealing in N2

J. Molina*, Kuniyuki Kakushima, Parhat Ahmet, Sugii Nobuyuki, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We report the electrical characteristics and reliability of Metal-La 2O3 stacks on silicon after Post Deposition Annealing (PDA) of La2O3 in N2. MIS capacitors were fabricated and their C-V and I-V characteristics before and after applying a Constant Voltage Stress (CVS) in the substrate injection condition were evaluated. By using 2 different physical thickness for La2O 3, the same Equivalent Oxide Thickness EOT ∼ 1.5nm is obtained for Al-gated and W-gated La2O3 stacks. This is explained by the presence of an already existent Al2O3 interfacial layer IL at the Al-La2O3 interface which results in a lower k for the total oxide stack. It is speculated that the physical thickness of this IL slightly increases after stress, which can be seen as degradation in the C-V characteristics of the Al-La2O3-nSi structure. This can be explained by the use of a modified Reaction-Diffusion (R-D) model, which is based on the Electric Stress-Induced Defect Generation (ESIDG) mechanism (1). Finally, longer lifetimes before breakdown were obtained for W-gated La2O3 MIS capacitors and a 10 years operation is guaranteed by using both the linear or reciprocal Vg models. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)757-765
Number of pages9
JournalECS Transactions
Issue number5
StatePublished - 2005
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 16 Oct 200521 Oct 2005

Fingerprint Dive into the research topics of 'Breakdown and reliability of metal gate-la<sub>2</sub>o<sub>3</sub> thin films after post-deposition annealing in N<sub>2</sub>'. Together they form a unique fingerprint.

Cite this