Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction

R. D. Aburano*, Hawoong Hong, J. M. Roesler, K. Chung, D. S. Lin, P. Zschack, H. D. Chen, T. C. Chiang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Different Ag/Si(111) systems have been examined using synchrotron x-ray diffraction. Multi-atomic-layer deposition of Ag onto a Si(111)-(7×7) surface maintained at room temperature results in an unstrained, (111)-oriented film. The interface shows a Ag-modified (7×7) structure which when annealed above 200-250°C transforms to a (1×1) structure. Although this is near the characteristic temperature for formation of the (3 × 3) R30° surface reconstruction commonly observed for a monolayer of Ag adsorbed on Si(111), no evidence of this (3 × 3) R30° reconstruction was found at the interface. A Ag monolayer (3 × 3) R30° surface, further covered by multilayer Ag deposition at room temperature, also shows no indication of the (3 × 3) R30° reconstruction at the interface. This indicates that the actual interface structure may or may not be related to the clean or adsorbed layer structures. The structure of the Ag-Si interface was further characterized by scans of the crystal truncation rods. Both the (7×7) interface prepared by room-temperature deposition and the annealed (1×1) interface show fairly sharp boundaries. The results suggest some intermixing occurs at the monolayer level for the annealed interface. The structure of the Ag film was also investigated.

Original languageEnglish
Pages (from-to)1839-1847
Number of pages9
JournalPhysical Review B
Issue number3
StatePublished - 1 Jan 1995

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    Aburano, R. D., Hong, H., Roesler, J. M., Chung, K., Lin, D. S., Zschack, P., Chen, H. D., & Chiang, T. C. (1995). Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction. Physical Review B, 52(3), 1839-1847.