Bottom electrode modification of ZrO 2 resistive switching memory device with Au nanodots

Dai Ying Lee, I. Chuan Yao, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The resistive switching properties of the ZrO 2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric field within the ZrO 2 film above the nanodots due to reduced effective film thickness and induces the localized conducting filaments easily. The operation parameters' variation for switching devices is, therefore, suppressed with lower operation voltage and resistance ratio. Long retention time (>10 6 s) and stubborn nondestructive readout test (>10 4 s) at room temperature and 150 °C are also demonstrated in this device.

Original languageEnglish
Article number02BJ04
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
StatePublished - 1 Feb 2012

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