Boosting Ge-epi P-well mobility & crystal quality with Si or Sn implantation and melt annealing

John Borland, Shang Shuin Chaung, Tseung-Yuen Tseng, Abhijeet Joshi, Bulent Basol, Yao Jen Lee, Takashi Kuroi, Toshiyuki Tabata, Karim Huet, Gary Goodman, Nadya Khapochkina, Temel Buyuklimanli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We investigated the effects of Si, Sn and cluster-C implantation into both P-well and N-well doped regions of Ge-epi on Si wafers after laser annealing. XRD analysis shows improved Ge-epi crystallinity after >1.5J/cm2 laser melt annealing (liquid phase epitaxial regrowth) compared to sub-melt annealing (solid phase epitaxial regrowth). For the P-well case the Ge-epi Rs decreased to 1,600Q/d compared to Si at 3,4002/d suggesting a hole mobility increase of 2.1x from 150cm2/V-s to 315cmTV-s but actual measured Hall mobility was 650cm2/V-s to a depth of 60nm, an increase of 4.3x. The 1.8J/cm2 laser melt anneal with Si implant improved mobility uniformly to 700cm2/V-s to a depth of lOOnm while Sn implant improved mobility to 900cm2/V-s from the Ge-epi surface to a depth of 70nm then increases to 3000cm2/V-s at a depth of lOOnm. Measuring mobility depth profiles can be very critical in engineering surface and bulk mobility improvements which can be determined by chemical compositional changes in the Ge-epilayer especially for C where no liquid phase diffusion or movement could be detected.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages357-372
Number of pages16
Edition7
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2018
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 30 Sep 20184 Oct 2018

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period30/09/184/10/18

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    Borland, J., Chaung, S. S., Tseng, T-Y., Joshi, A., Basol, B., Lee, Y. J., Kuroi, T., Tabata, T., Huet, K., Goodman, G., Khapochkina, N., & Buyuklimanli, T. (2018). Boosting Ge-epi P-well mobility & crystal quality with Si or Sn implantation and melt annealing. In J-M. Hartmann, A. Thean, A. Ogura, X. Gong, D. Harame, M. Caymax, G. Niu, A. Schulze, Q. Liu, G. Mashi, S. Miyazaki, A. Mai, & M. Osting (Eds.), ECS Transactions (7 ed., pp. 357-372). (ECS Transactions; Vol. 86, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/08607.0357ecst