@inproceedings{d3332528bf674e7db7b656a522a509df,
title = "Boosting Ge-epi P-well mobility & crystal quality with Si or Sn implantation and melt annealing",
abstract = "We investigated the effects of Si, Sn and cluster-C implantation into both P-well and N-well doped regions of Ge-epi on Si wafers after laser annealing. XRD analysis shows improved Ge-epi crystallinity after >1.5J/cm2 laser melt annealing (liquid phase epitaxial regrowth) compared to sub-melt annealing (solid phase epitaxial regrowth). For the P-well case the Ge-epi Rs decreased to 1,600Q/d compared to Si at 3,4002/d suggesting a hole mobility increase of 2.1x from 150cm2/V-s to 315cmTV-s but actual measured Hall mobility was 650cm2/V-s to a depth of 60nm, an increase of 4.3x. The 1.8J/cm2 laser melt anneal with Si implant improved mobility uniformly to 700cm2/V-s to a depth of lOOnm while Sn implant improved mobility to 900cm2/V-s from the Ge-epi surface to a depth of 70nm then increases to 3000cm2/V-s at a depth of lOOnm. Measuring mobility depth profiles can be very critical in engineering surface and bulk mobility improvements which can be determined by chemical compositional changes in the Ge-epilayer especially for C where no liquid phase diffusion or movement could be detected.",
author = "John Borland and Chaung, {Shang Shuin} and Tseung-Yuen Tseng and Abhijeet Joshi and Bulent Basol and Lee, {Yao Jen} and Takashi Kuroi and Toshiyuki Tabata and Karim Huet and Gary Goodman and Nadya Khapochkina and Temel Buyuklimanli",
year = "2018",
month = jan,
day = "1",
doi = "10.1149/08607.0357ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "357--372",
editor = "Jean-Michel Hartmann and Aaron Thean and Atsushi Ogura and Xiao Gong and David Harame and Matty Caymax and G. Niu and Andreas Schulze and Qizhi Liu and G. Mashi and Seiichi Miyazaki and Andreas Mai and Mikael Osting",
booktitle = "ECS Transactions",
edition = "7",
note = "null ; Conference date: 30-09-2018 Through 04-10-2018",
}