Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation

John Borland, Shang Shiun Chaung, Tseung-Yuen Tseng, Yao Jen Lee, Abhijeet Joshi, Bulent Basol, Takashi Kuroi, Gary Goodman, Nadya Khapochkima, Temel Buyuklimanli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effects of Sn, Si and cluster-C implantation into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing. For the P-well case a 7.3x increase in Hall bulk mobility to 3384cm2/Vs with cluster-C implant and for the N-well case a 4.6x increase in Hall bulk mobility to 2062cm2/Vs with Sn implant. Measuring layer mobility depth profiles shows mobility in the top 10-20nm of the surface can be up to 6000cm2/Vs for N-well with Sn implant and >10,000cm2/Vs for P-well with Sn implant.

Original languageEnglish
Title of host publication2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
EditorsHeiner Ryssel, Volker Haublein
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages101-105
Number of pages5
ISBN (Electronic)9781538668283
DOIs
StatePublished - 1 Sep 2018
Event22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany
Duration: 16 Sep 201821 Sep 2018

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2018-September

Conference

Conference22nd International Conference on Ion Implantation Technology, IIT 2018
CountryGermany
CityWurzburg
Period16/09/1821/09/18

Keywords

  • bulk mobility
  • differential Hall effect microscopy
  • Ge-epi
  • layer mobility

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  • Cite this

    Borland, J., Chaung, S. S., Tseng, T-Y., Lee, Y. J., Joshi, A., Basol, B., Kuroi, T., Goodman, G., Khapochkima, N., & Buyuklimanli, T. (2018). Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation. In H. Ryssel, & V. Haublein (Eds.), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings (pp. 101-105). [8807954] (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2018.8807954