Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

Po Chun Liu*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga 0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number2
DOIs
StatePublished - 21 Feb 2005

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