Bond pad design with low capacitance in CMOS technology for RF applications

Yuan Wen Hsiao*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A new bond pad structure in CMOS technology with low capacitance for gigahertz radio frequency applications is proposed. Three kinds of inductors stacked under the pad are used in the proposed bond pad structure. Experimental results have verified that the bond pad capacitance is reduced due to the cancellation effect provided by the inductor embedded in the proposed bond pad structure. The new proposed bond pad structure is fully process-compatible to general CMOS processes without any extra process modification.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
StatePublished - 1 Jan 2007

Keywords

  • Bond pad
  • Capacitance
  • Loss
  • Radio frequency integrated circuit (RF IC)

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