Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

Hsiao-Wen Zan*, Wei Tsung Chen, Hsiu Wen Hsueh, Chun Cheng Yeh, Chuang Chuang Tsai, Hsin-Fei Meng, Chia Chun Yeh, Ted Hong Shinn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.

Original languageEnglish
Pages (from-to)1158-1161
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
DOIs
StatePublished - 1 Jun 2011

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