Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

Hsiao-Wen Zan; Wei Tsung Chen; Hsiu Wen Hsueh; Chun Cheng Yeh; Chuang Chuang Tsai; Hsin-Fei Meng; Chia Chun Yeh; Ted Hong Shinn

doi:10.1889/1.3621031

Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

Hsiao-Wen Zan^*, Wei Tsung Chen, Hsiu Wen Hsueh, Chun Cheng Yeh, Chuang Chuang Tsai, Hsin-Fei Meng, Chia Chun Yeh, Ted Hong Shinn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.

Original language	English
Pages (from-to)	1158-1161
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
DOIs	https://doi.org/10.1889/1.3621031
State	Published - 1 Jun 2011

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title = "Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure",

abstract = "We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.",

author = "Hsiao-Wen Zan and Chen, {Wei Tsung} and Hsueh, {Hsiu Wen} and Yeh, {Chun Cheng} and Tsai, {Chuang Chuang} and Hsin-Fei Meng and Yeh, {Chia Chun} and Shinn, {Ted Hong}",

year = "2011",

month = jun,

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doi = "10.1889/1.3621031",

language = "English",

volume = "42 1",

pages = "1158--1161",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

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Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure. / Zan, Hsiao-Wen; Chen, Wei Tsung; Hsueh, Hsiu Wen; Yeh, Chun Cheng; Tsai, Chuang Chuang; Meng, Hsin-Fei; Yeh, Chia Chun; Shinn, Ted Hong.

In: Digest of Technical Papers - SID International Symposium, Vol. 42 1, 01.06.2011, p. 1158-1161.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

AU - Zan, Hsiao-Wen

AU - Chen, Wei Tsung

AU - Hsueh, Hsiu Wen

AU - Yeh, Chun Cheng

AU - Tsai, Chuang Chuang

AU - Meng, Hsin-Fei

AU - Yeh, Chia Chun

AU - Shinn, Ted Hong

PY - 2011/6/1

Y1 - 2011/6/1

N2 - We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.

AB - We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

ER -

Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

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