We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jun 2011|