Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

Che Wei Chen, Cheng Ting Chung, Ju Yuan Tzeng, Pang Sheng Chang, Guang Li Luo, Chao-Hsin Chien

Research output: Contribution to journalArticle

12 Scopus citations


In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.

Original languageEnglish
Article number6684319
Pages (from-to)12-14
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - 1 Jan 2014


  • Junctionless
  • body-tied
  • germanium
  • in-situ heavily doped
  • tri-gate

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