Body-tied germanium FinFETs directly on a silicon substrate

Che Wei Chen*, Cheng Ting Chung, Guang Li Luo, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high ION/IOFF > 106 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at G = ?2 V and a low OFF-current of 3 nA/μm at VG = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..

Original languageEnglish
Article number6353504
Pages (from-to)1678-1680
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number12
DOIs
StatePublished - 29 Nov 2012

Keywords

  • Body-tied fin field-effect transistors (FinFETs)
  • germanium
  • heterojunctions
  • high-mobility channel

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