Abstract
The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.
| Original language | English |
|---|---|
| Pages (from-to) | 623-626 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| DOIs | |
| State | Published - 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 10 Dec 1995 → 13 Dec 1995 |
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Gautier, J., Jenkins, K. A., & Sun, J. Y. C. (1995). Body charge related transient effects in floating body SOI NMOSFET's. Technical Digest - International Electron Devices Meeting, 623-626. https://doi.org/10.1109/IEDM.1995.499297