Body charge related transient effects in floating body SOI NMOSFET's

Jacques Gautier*, Keith A. Jenkins, Jack Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

20 Scopus citations

Abstract

The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.

Original languageEnglish
Pages (from-to)623-626
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 10 Dec 199513 Dec 1995

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