The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1995|
|Event||Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA|
Duration: 10 Dec 1995 → 13 Dec 1995