Body charge related transient effects in floating body SOI NMOSFET's

Jacques Gautier; Keith A. Jenkins; Jack Y.C. Sun

doi:10.1109/IEDM.1995.499297

Body charge related transient effects in floating body SOI NMOSFET's

Jacques Gautier^*, Keith A. Jenkins, Jack Y.C. Sun

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.

Original language	English
Pages (from-to)	623-626
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1995.499297
State	Published - 1995
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 10 Dec 1995 → 13 Dec 1995

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title = "Body charge related transient effects in floating body SOI NMOSFET's",

abstract = "The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.",

author = "Jacques Gautier and Jenkins, {Keith A.} and Sun, {Jack Y.C.}",

year = "1995",

doi = "10.1109/IEDM.1995.499297",

language = "English",

pages = "623--626",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 10-12-1995 Through 13-12-1995",

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T1 - Body charge related transient effects in floating body SOI NMOSFET's

AU - Gautier, Jacques

AU - Jenkins, Keith A.

AU - Sun, Jack Y.C.

PY - 1995

Y1 - 1995

N2 - The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.

AB - The transient operation of submicrometer floating body SOI NMOSFET's is studied and measured down to a nanosecond time scale. We emphasize the role of the overall hole charge in the body of the device, for a global understanding of the transient phenomena: drain current overshoot or undershoot, memory effect, dynamic instabilities... This charge integrates the device history, with a strongly bias dependent time constant, and influences the drain current, mainly by electrostatic action. The resulting transient current instability has to be considered to avoid anomalous circuit operation.

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U2 - 10.1109/IEDM.1995.499297

DO - 10.1109/IEDM.1995.499297

M3 - Conference article

AN - SCOPUS:0029513608

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EP - 626

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 10 December 1995 through 13 December 1995

ER -

Body charge related transient effects in floating body SOI NMOSFET's

Abstract

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