Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

Angada B. Sachid; Sourabh Khandelwal; Chen-Ming Hu

doi:10.1109/VLSI-TSA.2014.6839655

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

Angada B. Sachid, Sourabh Khandelwal, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839655
State	Published - 1 Jan 2014
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan Duration: 28 Apr 2014 → 30 Apr 2014

Publication series

Name	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country	Taiwan
City	Hsinchu
Period	28/04/14 → 30/04/14

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Sachid, A. B., Khandelwal, S., & Hu, C-M. (2014). Body-bias effect in SOI FinFET for low-power applications: Gate length dependence. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839655] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839655

Sachid, Angada B. ; Khandelwal, Sourabh ; Hu, Chen-Ming. / Body-bias effect in SOI FinFET for low-power applications : Gate length dependence. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

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abstract = "We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.",

author = "Sachid, {Angada B.} and Sourabh Khandelwal and Chen-Ming Hu",

year = "2014",

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doi = "10.1109/VLSI-TSA.2014.6839655",

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Sachid, AB, Khandelwal, S & Hu, C-M 2014, Body-bias effect in SOI FinFET for low-power applications: Gate length dependence. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014., 6839655, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, IEEE Computer Society, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, 28/04/14. https://doi.org/10.1109/VLSI-TSA.2014.6839655

Body-bias effect in SOI FinFET for low-power applications : Gate length dependence. / Sachid, Angada B.; Khandelwal, Sourabh; Hu, Chen-Ming.

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. 6839655 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

AB - We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

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Sachid AB, Khandelwal S, Hu C-M. Body-bias effect in SOI FinFET for low-power applications: Gate length dependence. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society. 2014. 6839655. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). https://doi.org/10.1109/VLSI-TSA.2014.6839655

Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

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