Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

Angada B. Sachid, Sourabh Khandelwal, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
StatePublished - 1 Jan 2014
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
Duration: 28 Apr 201430 Apr 2014

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan
CityHsinchu
Period28/04/1430/04/14

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    Sachid, A. B., Khandelwal, S., & Hu, C-M. (2014). Body-bias effect in SOI FinFET for low-power applications: Gate length dependence. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839655] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839655