Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K.

Hao-Chung Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, Tien-chang Lu, S. C. Wang

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80 %, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.

Original languageEnglish
Article number72161A
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7216
DOIs
StatePublished - Jan 2009
EventGallium Nitride Materials and Devices IV - San Jose, CA, United States
Duration: 26 Jan 200929 Jan 2009

Keywords

  • DBR
  • Electrical pumping
  • GaN
  • VCSEL

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