In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80 %, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.
|Number of pages||11|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Jan 2009|
|Event||Gallium Nitride Materials and Devices IV - San Jose, CA, United States|
Duration: 26 Jan 2009 → 29 Jan 2009
- Electrical pumping