Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Hidekazu Umeda*, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

33 Scopus citations

Abstract

We propose a novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate. The blocking-voltage boosting (BVB) technology utilizes ion implantation at the peripheral area of the chip as channel stoppers to terminate the leakage current from the interfacial inversion layers at AlN/Si. A depletion layer is widened in the substrate by the help of the channel stopper, which increases the blocking voltage of the HFET. The off-state breakdown voltage of the HFETs is increased up to 1340V by the BVB technology from 760V without the channel stoppers for the epitaxial GaN as thin as 1.4μm on Si. This technology greatly helps to increase the blocking voltage even for thin epitaxial GaN on Si, which leads to further reduction of the fabrication cost.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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