Bistable resistive switching of a sputter-deposited Cr-doped SrZrO 3 memory film

Chih Yi Liu*, Pei Hsun Wu, Arthur Wang, Wen Yueh Jang, Jien Chen Young, Kuang Yi Chiu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

97 Scopus citations

Abstract

Sputter-deposited Cr-doped SrZrO 3 -based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.

Original languageEnglish
Pages (from-to)351-353
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number6
DOIs
StatePublished - 1 Jun 2005

Keywords

  • Conduction mechanism
  • Nonvolatile memory
  • Resistive switching memory
  • SrZrO

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