Bistable resistive switching characteristics of poly(2-hydroxyethyl methacrylate) thin film memory devices

Ying Chih Chen*, Yan Kuin Su, Chun Yuan Huang, Hsin-Chieh Yu, Chiao Yang Cheng, Tai Hsiang Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (>103), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (>104 s).

Original languageEnglish
JournalApplied Physics Express
Volume4
Issue number5
DOIs
StatePublished - 1 May 2011

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