Bipolar resistive switching effect in Gd2O3 films for transparent memory application

Kou Chen Liu, Wen Hsien Tzeng*, Kow-Ming Chang, Yi Chun Chan, Chun Chih Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

A transparent resistive random access memory based on ITO/Gd 2O3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd2O3 for the application on the T-RRAM devices.

Original languageEnglish
Pages (from-to)1586-1589
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Gadolinium oxide
  • GdO
  • Resistive memory
  • RRAM
  • Transparent memory
  • TRRAM

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