Bipolar resistive switching characteristics of Gd2O3 thin film structure

Kow-Ming Chang*, W. H. Tzeng, K. C. Liu, Y. C. Chan, C. C. Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The resistive switching (RS) behavior of the Ti/Gd2O 3/Pt capacitor structure is fabricated and discussed in this paper. The switching characteristics operated under positive bias exhibits stable switching properties with a condensed voltage and resistance values dispersion, while the switching characteristics becomes unstable and large fluctuation on switching parameters under the negative bias operation. We suggest that the anode electrode plays an important role to the switching characteristics, and might be the causes of the asymmetry of the I-V curves between positive and negative operation. Constant voltage stress measurement is also tested to reveal the switching mechanism of the Gd2O3 film, and the switching mechanism is mainly based on the applied voltage and thermal Joule heat.

Original languageEnglish
Title of host publicationDielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages137-144
Number of pages8
Edition3
DOIs
StatePublished - 1 Aug 2011
EventGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2 May 20114 May 2011

Publication series

NameECS Transactions
Number3
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGraphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period2/05/114/05/11

Fingerprint Dive into the research topics of 'Bipolar resistive switching characteristics of Gd<sub>2</sub>O<sub>3</sub> thin film structure'. Together they form a unique fingerprint.

  • Cite this

    Chang, K-M., Tzeng, W. H., Liu, K. C., Chan, Y. C., & Kuo, C. C. (2011). Bipolar resistive switching characteristics of Gd2O3 thin film structure. In Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 (3 ed., pp. 137-144). (ECS Transactions; Vol. 35, No. 3). https://doi.org/10.1149/1.3569906