Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications

Tsung Ming Tsai*, Kuan Chang Chang, Ting Chang Chang, Yong En Syu, Siang Lan Chuang, Geng Wei Chang, Guan Ru Liu, Min Chen Chen, Hui Chun Huang, Shih Kun Liu, Ya-Hsiang Tai, Der Shin Gan, Ya Liang Yang, Tai Fa Young, Bae Heng Tseng, Kai Huang Chen, Ming Jinn Tsai, Cong Ye, Hao Wang, Simon M. Sze

*Corresponding author for this work

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Chemical Compounds

Engineering & Materials Science