Bipolar nonlinear Ni/TiO 2 /Ni selector for 1S1R crossbar array applications

Jiun Jia Huang*, Yi Ming Tseng, Chung Wei Hsu, Tuo-Hung Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

133 Scopus citations


A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO 2 /Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO 2 barriers. The series connection with an HfO 2 -resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.

Original languageEnglish
Article number5967885
Pages (from-to)1427-1429
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 1 Oct 2011


  • 4F
  • Crossbar array
  • resistance random access memory
  • resistive switching
  • sneak current

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