Bipolar Ni/TiO2/HfO2/Ni RRAM with multilevel states and self-rectifying characteristics

Chung Wei Hsu, Tuo-Hung Hou, Mei Chin Chen, I. Ting Wang, Chun Li Lo

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


To be compatible with 3-D vertical crossbar arrays, a TiO 2HfO2 bilayer resistive-switching memory (RRAM) cell sandwiched between Ni electrodes is developed. The proposed device has numerous highly desired features for the implementation of 3-D vertical RRAM, including: 1) stable bipolar resistive switching; 2) forming free; 3) self-compliance; 4) self-rectification; 5) multiple resistance states; and 6) room-temperature process. The resistive switching and current rectification are attributed to oxygen vacancy migration in HfO2 and potential barrier modulation of the asymmetric TiO2HfO2 tunnel barrier. The rectification ratio up to 103 is capable of realizing a single-crossbar array up to 16 Mb for future high-density storage class memory applications.

Original languageEnglish
Article number6542651
Pages (from-to)885-887
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 17 Jul 2013


  • 3-D memory
  • crossbar array
  • resistive-switching memory (RRAM)
  • self-rectification

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