Bipolar conductivity in amorphous HfO2

D. R. Islamov*, V. A. Gritsenko, C. H. Cheng, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

Original languageEnglish
Article number072109
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - 15 Aug 2011

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