Bipolar conductivity in amorphous HfO2

D. R. Islamov*, V. A. Gritsenko, C. H. Cheng, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

Original languageEnglish
Article number072109
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - 15 Aug 2011

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    Islamov, D. R., Gritsenko, V. A., Cheng, C. H., & Chin, A. (2011). Bipolar conductivity in amorphous HfO2. Applied Physics Letters, 99(7), [072109]. https://doi.org/10.1063/1.3626599