Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

Po-Chun Chen, Yung-Hsien Wu, Zhi wei Zheng, Yu Chien Chiu, Chun-Hu Cheng, Shiang Shiou Yen, Hsiao-Hsuan Hsu, Chun-Yen Chang

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11 Scopus citations

Abstract

In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of >10(4), a threshold voltage of -1.05 V, and a field-effect mobility of 2.14 cm(2).V-1.s(-1). By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.
Original languageEnglish
JournalIEEE/OSA Journal of Display Technology
Volume12
Issue number3
DOIs
StatePublished - Mar 2016

Keywords

  • Bipolar; oxygen plasma treatment; thin-film transistor (TFT); tin-monoxide (SnO)
  • BIAS STRESS STABILITY; FABRICATION

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