Bipolar bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic for low-voltage applications

Chung-Yu Wu*, Yuh Kuang Tseng

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A new full-swing BiCMOS logic circuits called the bipolar bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic is proposed and analyzed. HSPICE simulations have been performed to compare speed performance of the new BiCMOS logic circuit with those of CMOS, conventional BiCMOS, and Bootstrapped BiCMOS (BS-BiCMOS) logic circuits, in 1 μm technology. It has been shown that as compared to BS-BiCMOS (CMOS) logic gate, the new B2M-BiCMOS 3-input NAND gate with 2 V supply voltage and 0.5 pF output loading has about 36% (72%) improvement in the propagation delay time whereas the B2M-BiCMOS 5- and 7- input NAND gates have 1.84 (2.4) and 2.16 (3.1) times of improvement, respectively. This advantageous performance makes the B2M-BiCMOS feasible in many low-voltage BiCMOS applications.

Original languageEnglish
Pages1174-1176
Number of pages3
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 3rd IEEE International Conference on Electronics, Circuits, and Systems, ICECS. Part 2 (of 2) - Rodos, Greece
Duration: 13 Oct 199616 Oct 1996

Conference

ConferenceProceedings of the 1996 3rd IEEE International Conference on Electronics, Circuits, and Systems, ICECS. Part 2 (of 2)
CityRodos, Greece
Period13/10/9616/10/96

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  • Cite this

    Wu, C-Y., & Tseng, Y. K. (1996). Bipolar bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic for low-voltage applications. 1174-1176. Paper presented at Proceedings of the 1996 3rd IEEE International Conference on Electronics, Circuits, and Systems, ICECS. Part 2 (of 2), Rodos, Greece, . https://doi.org/10.1109/ICECS.1996.584632