A new full-swing BiCMOS logic circuits called the bipolar bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic is proposed and analyzed. HSPICE simulations have been performed to compare speed performance of the new BiCMOS logic circuit with those of CMOS, conventional BiCMOS, and Bootstrapped BiCMOS (BS-BiCMOS) logic circuits, in 1 μm technology. It has been shown that as compared to BS-BiCMOS (CMOS) logic gate, the new B2M-BiCMOS 3-input NAND gate with 2 V supply voltage and 0.5 pF output loading has about 36% (72%) improvement in the propagation delay time whereas the B2M-BiCMOS 5- and 7- input NAND gates have 1.84 (2.4) and 2.16 (3.1) times of improvement, respectively. This advantageous performance makes the B2M-BiCMOS feasible in many low-voltage BiCMOS applications.
|Number of pages||3|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 3rd IEEE International Conference on Electronics, Circuits, and Systems, ICECS. Part 2 (of 2) - Rodos, Greece|
Duration: 13 Oct 1996 → 16 Oct 1996
|Conference||Proceedings of the 1996 3rd IEEE International Conference on Electronics, Circuits, and Systems, ICECS. Part 2 (of 2)|
|Period||13/10/96 → 16/10/96|