Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

Jenn-Fang Chen, Ross C.C. Chen, C. H. Chiang, Yung-Fu Chen, Y. H. Wu, Li Chang

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Abstract

Capping InAs quantum dots (QDs) with an InGaAs layer allows strain relaxation to induce a low-energy electron state below a set of fine dot family states, which is consistent with photoluminescence (PL) spectra. The evolution of InAs thickness suggests a bimodal onset relaxation, i.e., a fine dot family that is strain-relieved by indium outdiffusion from the QDs, as suggested by transmission electron microscopy, and a low-energy dot family that is strain relaxed by the generation of lattice misfits. The indium outdiffusion can explain an abnormal PL blueshift in 70 meV in the fine dot family at onset of strain relaxation.

Original languageEnglish
Article number092110
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number9
DOIs
StatePublished - 30 Aug 2010

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