Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs

Yu Jen Hsiao*, Ting Jen Hsueh, Jia Min Shieh, Yu Ming Yeh, Chien Chih Wang, Bau Tong Dai, Wen Wei Hsu, Jing Yi Lin, Chang Hong Shen, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

CuInGaSe 2 (CIGS) thin-film has successfully grown at low temperature 400 °C for bifacial solar cells and TFTs without degrading the silicon solar cell on the other side. The efficiency of CIGS solar cells reached 6.3% and 11% at 400 and 500 °C, respectively, by sodium-free and Cd-free (n-type ZnS buffer layer used) green technologies. Texturing technique has been introduced here on Si not only to relieve the sodium-free impact on CIGS-crystallization but also to enhance the adhesion between CIGS solar cells and underneath substrate. CIGS TFTs are reported first time and revealed a record-high hole-mobility of 0.22 cm 2 /V-s. Hybrid CIGS solar cells/TFTs are uniformly formed on 6″ wafers, simultaneously powered with silicon solar cells.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

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