Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3 CMOSFETs

C. C. Liao*, D. S. Yu, C. F. Cheng, K. C. Chiang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We have studied bias-temperature instability (BTI) on fully nickel-silicided (NiSi) and germanided (NiGe) gates on high-k Al 2O3 n metal oxide semiconductor field effect transistors (MOSFETs) and pMOSFETs, respectively. At an equivalent oxide thickness of 1.7 nm, the NiSi/Al2O3 nMOSFETs and NiGe/Al2O 3 nMOSFETs have a comparable threshold voltage (Vt) change of -34 and 33 mV at 85°C and 10 MV/cm stress for 1 h. This result is different from the more severe negative BTI (NBTI) degradation measured in oxynitride pMOSFET than positive BTI (PBTI) in nMOSFET. The extrapolated maximum voltage for 10 years' lifetime is 1.16 and -1.12 V from NiSi-NiGe/Al2O3 complementary MOSFETs (CMOSFETs) that can barely meet the required 1 V operation with 10% safety margin. Further improvement is still required because the 1.8 nm oxynitride CMOSFETs have higher 10 years' lifetime operation voltages of 2.48 and -1.52 V for PBTI and NBTI, respectively.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - 1 Aug 2005

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