Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Yu Chun Chen, Ting Chang Chang*, Hung Wei Li, Shih Ching Chen, Jin Lu, Wan Fang Chung, Ya-Hsiang Tai, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

129 Scopus citations

Abstract

This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress.

Original languageEnglish
Article number262104
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
StatePublished - 28 Jun 2010

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