Bias- and temperature-assisted trapping/de-trapping of RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Jin Ming Zhang, Ting En Hsieh, Tian-Li Wu, Szu Hao Chen, Shi Xuan Chen, Po Chien Chou, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, we investigate the RON degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase RON degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the RON degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases further, the RON degradation is reduced. Third, the RON degradation slowly increases again. RON degradation is characterized with different temperatures, the results show that 1) high temperature leads to a smaller RON degradation compared to the result at room temperature and 2) high temperature shifts the peak of the RON degradation at a lower drain bias. A possible mechanism that the trapping and de-trapping could occur due to the high temperature and high drain bias is proposed to explain the observed results.

Original languageEnglish
Title of host publication24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538617793
DOIs
StatePublished - 5 Oct 2017
Event24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, China
Duration: 4 Jul 20177 Jul 2017

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2017-July

Conference

Conference24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
CountryChina
CityChengdu
Period4/07/177/07/17

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