Bi-direction transmissible gate driver on array

Po-Tsun Liu*, Guang Ting Zheng, Tu Chia-Heng, Jin Hao Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years, gate driver using amorphous silicon (a-Si) technology for the TFT-LCD has become the main stream due to the mature manufacturing, low-cost processing, and elimination of the gate driver ICs. However, it’s still three challenges of design the integrated gate driver by a-Si encounters which are the low field-effect mobility, low reliability issue under high voltage stress, and the lack of P-type transistor.

Original languageEnglish
Title of host publication2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages167-169
Number of pages3
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2019
Event7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 - Kyoto, Japan
Duration: 19 May 201923 May 2019

Publication series

NameECS Transactions
Number1
Volume90
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference7th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019
CountryJapan
CityKyoto
Period19/05/1923/05/19

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  • Cite this

    Liu, P-T., Zheng, G. T., Chia-Heng, T., & Huang, J. H. (2019). Bi-direction transmissible gate driver on array. In Y. Kuo (Ed.), 2019 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2019 (1 ed., pp. 167-169). (ECS Transactions; Vol. 90, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/09001.0167ecst