Beam shaping of GaN/InGaN vertical-injection light emitting diodes via high-aspect-ratio nanorod arrays

M. A. Tsai, Peichen Yu*, C. L. Chao, C. H. Chiu, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, J. J. Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
DOIs
StatePublished - 1 Dec 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: 31 May 20095 Jun 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period31/05/095/06/09

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    Tsai, M. A., Yu, P., Chao, C. L., Chiu, C. H., Kuo, H-C., Lu, T., Wang, S. C., & Huang, J. J. (2009). Beam shaping of GaN/InGaN vertical-injection light emitting diodes via high-aspect-ratio nanorod arrays. In Conference on Lasers and Electro-Optics, CLEO 2009 (Optics InfoBase Conference Papers). https://doi.org/10.1364/CLEO.2009.CMH5