Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs

Hung Pin D Yang*, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (<1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current.

Original languageEnglish
Pages (from-to)94-99
Number of pages6
JournalOptics Communications
Volume274
Issue number1
DOIs
StatePublished - 1 Jun 2007

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    Yang, H. P. D., Hsu, I. C., Lai, F. I., Lin, K-J., Hsiao, R. S., Maleev, N. A., Blokhin, S. A., Kuo, H-C., & Chi, J. Y. (2007). Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs. Optics Communications, 274(1), 94-99. https://doi.org/10.1016/j.optcom.2007.01.063