Be diffusion in InGaAs/InP heterojunction bipolar transistors

Sandeep R. Bahl, Nick Moll, Virginia M. Robbins, Hao-Chung Kuo, Brian G. Moser, Gregory E. Stillman

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Classic signatures of Be diffusion were observed in InAlAs/InGaAs HBT's after elevated temperature bias stress, i.e., a positive shift in the Gummel plot, higher collector ideality, and higher offset voltage. An activation energy of 1.57 eV was calculated. Lifetimes of 3.3 × 106 and 37000 h were extrapolated for low and high power operation, respectively. In contrast, an InP/InGaAs HBT with a C doped base showed no signatures of C diffusion. The results show that Be diffusion is manageable at lower power. They also support the idea that C is more stable than Be in this material system.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number7
DOIs
StatePublished - 1 Jul 2000

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